The Research Of THz InP HENT Monolithic Low Noise Amplifier

InP based high electron mobility transistor(InP HEMT) with the low noise properties, high electron mobility, excellent anti-radiation characteristics etc, is very suitable for the production of low noise amplifier. InP HEMT now has gradually developed into a very competitive technology in the MMIC or even TMIC field. In this paper, the following work has been done:1、This paper introduces the latest progress of terahertz monolithic low noise amplifier, a brief analysis of the device characteristics of InP HEMT and related technology, and briefly introduces the testing technology, including several commonly used two port calibration technology and two port de-embedding technology. According to the test results of devices on-wafer, to build the small signal equivalent circuit model and the noise equivalent circuit model, and a terahertz monolithic low noise amplifier is designed. The design process includes the choice of the circuit topology, the design of the bias circuit and the matching circuit, simulation and optimization of the circuit, finally determine the circuit layout according to the layout adjustment rules.2 、 The terahertz monolithic low noise amplifier is implemented, tested and analysed through autonomous 0.1um InP HEMT process domestic. In the bias condition of Vd=1.7V and Vg=0V, the small signal gain of low noise amplifier in 101.3~106.1GHz is greater than 5dB, reaches a maximum gain of 7.007 dB at 104 GHz, the input and the output return loss is better than-5dB. Although the circuit experimental results and design index are different, but do breakthrough in the research on THz InP HEMT monolithic low noise amplifier by autonomous technology. The research has important practical significance to improve our technology in the field of terahertz overall level, to narrow the gap with foreign advanced level and to break the technology blockade of developed countries against our country.