Study On Noise Model Of High Electron Mobility Transistor And Microwave Low Noise Amplifier

With the development of society and technological progress,the demand for RF front-end systems in military and civilian fields such as broadband communications,high-precision radar,and aviation remote sensing is increasing.The low-noise amplifier is a vital part of the RF front-end system.Its noise figure and gain determine the sensitivity and dynamic range of this RF front-end system.With the rapid development of science and technology,the operating frequency of RF front-end systems has risen to the microwave millimeter-wave band,so the research on high-performance microwave millimeter-wave low noise amplifiers is particularly important.With excellent frequency,noise,and gain characteristics,InP HEMT devices are the most competitive devices for microwave,millimeter-wave,and terahertz MMIC designs.They are widely used in the fields of imaging,detection,and communication.This article mainly focuses on the InP HEMT small signal model and noise model,and completes a W-band broadband low-noise amplifier design based on the established noise model.The main research contents are as follows:(1)Improved small signal model of InP HEMT device.In this paper,the InP HEMT device is firstly modeled by using the traditional HEMT small signal model and the existing problems in the traditional small signal model are analyzed.Aiming at the problem of poor high-frequency fitting accuracy on the S-parameters of the traditional small-signal model,an improved InP HEMT small-signal model considering channel distribution effect and lossy substrate effect is proposed and a detailed parameter extraction method is proposed for the improved InP HEMT small signal model.The results show that the improved small signal model can significantly improve the fitting accuracy of S parameters at high frequencies.(2)Improved noise model of InP HEMT device.In this paper,the InP HEMT device noise is characterized based on the traditional PRC noise model and temperature noise model,and the underestimation of the minimum noise coefficient is analyzed by using the noise correlation matrix.Aiming at the problem of underestimation of minimum noise coefficient,the improved PRC noise model and temperature noise model were proposed respectively,considering channel distribution effect and lossy substrate effect.A detailed noise factor extraction method is proposed for the two improved noise models,and the accuracy of the model is verified.The proposed noise model can effectively improve the problem of the minimum noise coefficient underestimation and improve the fitting accuracy of the noise model.The improved noise model will be applied to the subsequent design of low noise amplifier,so as to improve the success rate of layout.(3)W-band wideband low noise amplifier.In this paper,a W-band wideband low noise amplifier based on InP HEMT coplanar waveguide(CPW)is designed.Based on the threestage cascade structure,the amplifier uses the multi-filter broadband input matching technology and gain compensation technology to achieve good noise gain performance over the 75–105 GHz band.The layout simulation show that,within the working band of 75–105 GHz,the input reflection coefficient is less than-13 d B,the output reflection coefficient is less than-12 d B,the gain is 20.1±0.2 d B,the noise figure is 3.15±0.15 d B,and a whole band stability is realized.