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Study Of The Inversion-law In MEMS Manufacturing Of High-resistivity Silicon Tiny Structure’s Errors

Posted on:2015-05-10Degree:MasterType:Thesis
Country:ChinaCandidate:H H ChenFull Text:PDF
GTID:2308330473453381Subject:Mechanical and electrical engineering
Abstract/Summary:PDF Full Text Request
Microstrip patch antenna which produced by tiny structures processing technology have lots of advantages: low profile, small size, light weight, highly integrated, and it can conformal with the carrier. As communication nodes of ammunition for intelligent transformation, it can improve the accuracy of munitions against targets. The antenna based on high-resistance silicon has small loss, easy to set array, and can improve the antenna power, gain, etc. largely. But until now measuring the internal dimensions of the tiny structures is a bottleneck technology. To solve this problem, this thesis explores the inversion-law between the structure sizes and electrical properties of high-resistivity silicon C/X/Ku-band array patch antenna, the main work is as follows:1. C/X/Ku band antenna basic design and simulation. The three different bands antenna are as research subjects, before analysis the electrical properties of the three should be adjusted at the best status.2. Research the inversion-law between the electrical properties and the size errors of the three different antennas. In the manufacturing process, the dimension errors are generated inevitably, these errors will affect the electrical properties of the antenna such as: radiation gain, VSWR, return loss coefficient, and radiation efficiency. Use simulation software to simulate the correspondence between the different band antennas’ electrical properties and their geometry sizes changes.3. Find the maximum size of the key error and how much be allowed. Through the relationship between the geometry size and electrical properties, identify the critical dimensions size error, which lead electrical properties change most sensitive even make the antenna failure to use. Then establish function between electrical properties and geometry key error size changes. Also the critical dimensions size error can provide reference in the processing.4. Research of MEMS processing technology. Referring to the inversion-rule, get a deep study of etching, sputtering and plating composite technology, high-resistivity silicon cutting technology, packaging technology of tiny structures, breakthrough the difficulties. Create C/X/Ku band microstrip antennas samples.5. The test of antennas’ electrical performance. Use microwave system to test the electrical performances of the antenna samples. Verify the inversion-law and use it get the actual critical dimensions size error of the samples.
Keywords/Search Tags:tiny structures, MEMS, high-resistance silicon, microstrip array antenna, inversion-law
PDF Full Text Request
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