Design And Research Of 3300V IGBT

IGBT(Insulated Gate Bipolar Transistor) is a composite type device which is composed of MOSFET and BJT. So it not only has the advantages of small driving power and fast switching speed which MOSFET has, but also has the advantage of high current which BJT has. Industry such as new energy and transportation has a huge demand for IGBT, so the localization of IGBT has great significance. Underthe traction of the 02 major projects, 3300 V non-punch-through IGBT is studied in this dissertation. Based on the process of domestic company, we have carried out experiments. The detail work of this dissertation is listed below:(1)The cell design, simulation, layout, test are finished in this section. This section mainly includes these following aspects: First, we determine the resistivity of the substrate material, the crystal orientation and the minority carrier lifetime; Second, with the 2D simulation tools Tsuprem4 and Medici, the P-Well implantation dose, the gate length, the P-back implantation dose and the JFET implantation dose are determined. At last, layout of the device in accordance with the design requirements is designed.(2) After the principle of junction terminal including FLR and FP is analyzed, the VLDterminal structure of junction terminal used in the dissertation is proposed.Through simulation, the structure and implantation dose of the junction terminal are determined. And then the process of IGBT is listed in detail. Finally, layout of the device in accordance with the design requirements is drawn.(3) Based on the simulation, experiments are made in the foundry. Atlast, some tests about static and dynamiccharacteristics of IGBT are done.