Optimization And Design Of 1200V Super-Junction IGBT Device

Insulated gate bipolar transistor(IGBT)has the advantages of low on-voltage drop,high carrier density,high input impedance and wide safe working area,so it is often used in high-power circuit system.The contradictory relationship between the on-voltage drop and turn-off loss of IGBT devices has further been improved by the proposed super-junction insulated gate bipolar transistor(SJ-IGBT),which is one of the important trends of IGBT development in the future.This thesis combines the theory of IGBT and super junction,aiming to analyze and optimize the SJ-IGBT device,and design a 1200V SJ-IGBT device with high performance.In this thesis,the structure and working principle of the SJ-IGBT device are analyzed in detail firstly,and the device simulation platform is built based on computer software.Combined with theoretical analysis and simulation verification,the influence of the structure and process parameters on static and dynamic characteristics of the device is summarized.Secondly,based on the tradeoff between the on-voltage drop and breakdown voltage and the turn-off loss of the SJ-IGBT device,as well as the process fluctuation and other factors,the device structure is designed in detail.Three new device structures are proposed,including the structure with carrier storage layer,the structure with collector double diffusion and the structure with floating emitter.These new structures meet the basic static parameters,such as breakdown voltage and threshold.The switching loss is also reduced greatly.At the same time,the avalanche and short-circuit robustness are improved.Finally,three new structures are compared and analyzed comprehensively,and it is determined that the SJ-IGBT with floating emitter is the relatively optimal structure.The simulation results show that the breakdown voltage of SJ-IGBT with floating emitter is 1430V,the threshold voltage is 5.0V,the on-voltage drop is 1.48V at the current density of 100A/cm~2;The turn off loss is 1.68m J/cm~2 and the avalanche tolerance is 550m J at the load voltage of 600V;The short-circuit withstand time of the device is 31?s when the short-circuit voltage is 800V.All of the performance parameters meet the design specification.