The Study Of Chip Parameter Extraction Technology For The Wide Bandgap GaN Device

With the continual development of the modern microwave technology, Microwave receiver/transceiver system is developing into the direction of small size and high power. The demand of high power increase some higher requirements to the devices. As a new wide bandgap semiconductor material, the GaN device, with many advantages, such as the wide forbidden band, high speed in the saturated electron drift velocity, high breakdown electric field, low dielectric constant, high thermal conductivity, stable chemical and high resistance to radiation ability, becomes the preferred material of microwave electronic devices in the field of high temperature, high frequency and high power.With the requirements increasing of the microwave receiver/transceiver system miniaturization, the amplifier module should be designed with the transistors die which a smaller size. The characteristic and the measurement environment of the transistors die were analyzed in this paper. The study results indicate that the work tool of the vector network analyzer usually can’t meet the requirements of the transistors die’s measurements and the specific work tool is very expensive. Therefore, the low cost S parameter measurement circuits of the transistors die consisted of the work tool of the vector network analyzer available were presented and the S parameters were extracted through a method of software and hardware. It was very significance to the design of the power amplifier design.This paper firstly introduced the calibrate error in vector network analyzer which is widely existing, and then study the generate mechanism of the calibrate errors. The error calibrate method for the errors that can be modified were listed in this paper. The technology of TRL calibration method using in the plane circuits measurement was introduced especially. Through the TRL calibrate, the test reference plane of the vector network analyzer is set at the specified location which makes it convenient to accurately measure the performance of the DUT(device under test). Thirdly, the TRL calibration kits are designed and fabricated in accordance with the S parameter extraction of wide bandgap GaN chip. The S parameters of the GaN under different static offset point were extracted using the TRL calibration kit. At last, the measured results was discussed and analyzed.