| SiC has received widespread attention for its excellent material properties in recent years, with the deepening of the research, silicon carbide semiconductor devices based on SiC material are developed one after another, among which, silicon carbide MOSFET stands out with its excellent features of lower on-resistance, higher operating temperature and frequency, As switching device, silicon carbide MOSFET operates in the state of opening and shutting down for a long time in the practical use. According to research, hard switching is still the major switch mode for silicon carbide MOSFET up to now, leading to the deterioration of switch losses problem. On the other hand, the voltage and current change severely during the switching process, voltage and current overshoot occurs attributed to the circuit parasitic inductance, Device will be damaged when the overshoot exceed its capacity, doing serious harm to the system.In the background of the program "Key technologies research on preparation and application of 1200V SiC MOSFET device", cooperated with the institute of smart grid of SGCC, the simulation circuit, namely the measurement circuit of SiC MOSFET, is proposed to analyze factors that influence SiC MOSFET’s dynamic characteristics. In this paper, the discuss is focus on the impact of drive resistance, gate stray inductance, temperature and load’s feature. When changing the factors above, attention is paid to see the reaction of switch time and voltage overshoot of SiC MOSFET during its dynamic course. In addition, the test platform is built to study the switch course of SiC MOSFET practically, consequently, the dynamic characteristic’s reaction is investigated when the load turns into inductance from resistance. Meanwhile comparison is made to see the difference of experiment result and simulation result, thus verifying the accuracy of the simulation circuit.In short, the work of this paper has provided a reliable simulation circuit and test platform for the research on the dynamic characteristic of SiC MOSFET. |
