Study On The Key Technology Of Anti-total Dose With Double-gate MOS Structure

With the continuous development of aerospace technology and nuclear technology,more and more sophisticated electronic equipment needs to be used in the irradiation environment,the equipment in the integrated circuit module by the impact of radiation will cause the circuit performance degradation or even failure.In order to ensure that electronic equipment can work well in a variety of radiation environment,anti-radiation research has become increasingly important.In this paper,the performance of anti-total dose irradiation effect of thick gate NMOS transistor is studied as the starting point.In this paper,the improvement of the double gate MOS structure for the total dose irradiation effect tolerance than the thick gate NMOS transistor is studied.And three feasible divider structures are proposed for the double-gate MOS structure.Then the performance of three kinds of divider structures is studied.Finally,several kinds of circuits layouts involved in the paper are designed and then developed detailed experimental and test plan.In this paper,the basic principle of total dose irradiation effect is discussed,and the effect of total dose irradiation on the electrical performance of MOS transistor is expounded in detail.In this paper,the establishment of the total dose irradiation effect model is studied and the 3D model of the thick gate NMOS transistor,the thin gate NMOS transistor and the double gate NMOS transistor is constructed by using the Sentaurus TCAD software,and the simulation of the total dose irradiation effect is carried out.Research found that the using of double gate MOS structure can improve the total dose irradiation effect tolerance of the thick gate NMOS transistor.In this paper,three divider structures are proposed for the double-gate MOS structure,which are resistive divider structure,diode divider structure and PMOS divider structure.Then,the performance of the three divider structures and their inverters are studied by Cadence software.Finally,the influence of the total dose irradiation effect is simulated by the modification of the simulation model.And the performance of the MOS device is simulated by the modified model.It is found that when the circuit is affected by the total dose irradiation effect,the double-gate MOS inverter with diode divider structure has the best control of its switching threshold drift,and the double-gate MOS inverter with PMOS divider structure has the minimum propagation delay growth.In this paper,the layouts of the general CMOS buffer and three double-gate MOS buffer with difference divider structure were designed,and then after DRC and LVS the layouts have been send to the foundry.And developing a detailed plans for the following total dose of radiation experiments and circuit performance testing.