Key Technology Of SOI Strain-SiGe BiCMOS

Strained Si BiCMOS(composed of TF-SOI SiGe HBT and TF-FD-SSOI MOSFET) technology that based TF(Thin Film)-SOI substrate is the current focus of research and development at home and abroad.It has broad application prospects in high-performance, highly integrated and low-power nanometer circuits.The mainly work of this paper is research for electrical characteristics of TF-SOI SiGe HBT and TF-SSOI MOSFET.1).Establishment model of TF-SOI SiGe HBT collector junction capacitance space charge region for TF-SOI SiGe HBT structure this paper proposed. On this basis, further establishing TF-SOI SiGe HBT positive/negative early voltage model. Simulation and analysis for early and frequency characteristics of TF-SOI SiGe HBT, practical value to obtain the relevant conclusions, gained practical value of the relevant conclusions; 2).Solving the Poisson equation to obtain two-dimensional surface potential model of TF-FD-SSOI MOSFET, Further establish a threshold voltage of the device and the subthreshold current model. ISE-TACD numerical simulation results show that: the results are consistent with the model built in this paper to verify its correctness.This related research of TF-SOI SiGe HBT and TF-FD-SSOI MOSFET electrical characteristics in this paper, can provide important theoretical basis for the research and design of the TF-SOI SiGe BiCMOS.