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A Research On Noise Characteristic And Reliability Diagnostic Method Of 4H-SiC JBS Diode

Posted on:2015-04-21Degree:MasterType:Thesis
Country:ChinaCandidate:Y ZhouFull Text:PDF
GTID:2308330464964598Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
Silicon Carbide(Si C) material has the advantage of large band gap, high thermal conductivity, high breakdown electric field, strong anti-radiation ability and so on, therefore it is very suitable to fabricate high-temperature, high-frequency, high-power and anti-radiation devices. Si C Junction Barrier Schottky(JBS) diodes, combine the advantages of Pi N diode and Schottky Barrier Diode(SBD), is obtained by adding Pi N structure to SBD. JBS has the advantage of low-resistance, high operating temperatures, lower reverse leakage current and higher blocking voltage characteristics, thus significantly reduced the switching losses and improved the anti-radiation ability of the device. As a result, JBS improves the performance of conventional Si Schottky diodes both in materials and structure. It’s obvious that Si C JBS diode has great potential among power rectifiers. Semi-conductor devices and integrated circuits take on the tendency of high speed, high integration and low power. As the dimensions of the device shrink, the resistance capability to overstress of devices, and circuits becomes lower and they are very sensitive to EOS/ESD, radiation and stress. So, it should be pay sufficient attention to the reliability of the device, especially in aviation, aerospace and other military fields where the reliability of the device will be threaten seriously by the poor working conditions.The forward and reverse current characteristic of JBS has been analyzed in this paper. Experiments are designed to measure noise in Si C JBS diode in order to describe device damage caused by electro static discharge(ESD). The experimental results show that either under forward bia or reverse bia, forward noise in JBS increases as the number of ESD pulses rose while reverse noise increases with the number of discharge cycles in 1Hz ~ 10 Hz. Among these noise parameters, forward 1/f noise, reverse 1/f noise and reverse white noise can be extracted as sensitive noise parameter to describe damage in JBS because these parameters change significantly. This method helps to analyze other types of stress injuries accurately and has important guiding significance in the reliability of JBS.
Keywords/Search Tags:Si C JBS Diode, Reliability, Noise, Failure Analysis
PDF Full Text Request
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