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The Research On Failure Analysis And Evaluation Method For Reliability Of IGBT

Posted on:2017-03-25Degree:MasterType:Thesis
Country:ChinaCandidate:Y N LiFull Text:PDF
GTID:2308330488486000Subject:Electrical engineering
Abstract/Summary:PDF Full Text Request
With the new energy access and the development of flexible direct current transmission, the requirements of exchange flow valve equipment are becoming larger and target:The Insulated Gate Bipolar Transistor (IGBT) has become a core component for converter valve, Therefore, studying the reliability of IGBT power module and the methods of monitoring and evaluation is very important to the safe and reliable operation of the new energy power generation and conversion system.However, the most internal faults of power electronic devices module are difficult to directly be measured, the issue of condition monitoring and reliability assessment is worthy of further exploration, otherwise it is hard to ensure the reliability of system.Therefore, this paper first reviewed the present situation of the study on monitoring methods and reliability in the IGBT module, then introduced the working principle of IGBT, switch characteristics under the high temperature, as well as the type of module encapsulation. And then it analyzed the failure of IGBT module from internal and external factors such as circuit structure, the electric stress, and the failure analysis model under the leakage current mode. The paper also analyzed the failure mechanism of the power module IGBT and the reliability of existing countermeasures. Finally the paper put forward a kind of external characteristic monitoring method for IGBT module, which can carry on the timely and effective reliability evaluation to the specific module, so as to provide reference for the reliability of the IGBT module assessment.
Keywords/Search Tags:IGBT, Failure Analysis, Reliability, External Characteristics Monitoring
PDF Full Text Request
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