Study On Computational Fluid Dynamics Of PMOCVD

In Al N material has drawn lots of attention due to its character that it can achieve perfect lattice match to Ga N at free strain condition when In content is 17.6%.But growing high quality In Al N thin film is a international problem because of a seriers of reasons like the reactions between TMAl and NH3,the differences between the character of In N and Al N etc.PMOCVD(pulsed metal organic chemical vapor deposition) is a new process method to grow In Al N material, which is proposed by Xi Dian University. And TMIn,TMAl and NH3 are supplied alternately. In this way, the parastic reaction has been reduced and high quality In Al N material have been successfully grown by PMOCVD.Based on CFD and chemical kinetics. The fluid dynamics behavior and gas phase reaction of PMOCVD growth of In Al N is researched. The simulation model of PMOCVD reactor is established according to MOCVD equipment by Gambit.Pulsed setting of PMOCVD is accomplished by the UDF module of Fluent. and contrastion of mole fraction on the substrate between traditional MOCVD and pulsed MOCVD.The result of simulation shows the advantages of PMOCVD at reducing the parastic rection and growing high quality In Al N material.Based on orthogonal theory. A simulation plan of PMOCVD is designed. According to the range and variance analysis of the growth surface of simulation results.An optimization of reactor pressure, growth temperature and TMIn pulsed time on In Al N growth by PMOCVD is obtained. The optimism results are 200 torr,933K and 18 s,which is consistent with experimental results.