Research On CFD Simulation Of PMOCVD Growth Of InAIN Material

When In content is17.6%, InAlN and GaN can achieve perfect lattice match andfree strain condition, so that avoid a series of problems due to lattice mismatch.However, because of a big growth characteristics between InN and AlN, growthingrich-In and high quality InAlN material become a huge problem recently.PMOCVD (pulsed metal organic chemical vapor deposition) is a new processmethod, which is proposed by XiDian University. And group-Ⅲ and group-Ⅴsourcesare supplied alternately and High quality InAlN material have been successfully grownby PMOCVD in homemade MOCVD system, and its research report have beenattracted widely concern.The fluid dynamics behavior of PMOCVD growth of InAlN materials has beenresearched in this paper by CFD (computational fluid dynamics) software FLUENT.The simulation model of PMOCVD reactor is established according to home-made120-MOCVD equipment; pulsed function is written by C language in UDF (userdefine function) module; and do a contrastion of fluid dynamic behavior betweentraditional continuous and pulsed MOCVD. The result shows that PMOCVD candecrease precursors mole concentration, reduce pre-reaction so that improve thequality of InAlN material. Based on the above study, we particularly presented adetailed study of the effects of changing the key growth condition of reactor pressure,growth temperature and TMIn pulsed time on InAlN growth by Pulsed Metal OrganicChemical Vapor Deposition（PMOCVD）. The optimism results are200torr，973K and18s,which is consistent with experimental results. The good agreement betweenexperimental and simulation results supports the reliability of simulation work and canprovide a growth range and some valuble reference for the future experiment.