Research On Resistive Switching Memory Based On Binary Oxides

With the rapid development of the semiconductor technology, the device feature sizes is shrinking. When the IC process technology node reaches 32 nm, the conventional memory scaling of flash memory is expected to approach the technical and physical limitations in the future. The main reason is that the thinner thickness of the metal oxide film, the larger leakage current, resulting in the oxide film can not be stored charge effectively. Recently, Resistive Random Access Memory(RRAM) has been intensively researched as one of the most promising candidates in the next generation nonvolatile memory, because of its excellent characteristics of low power consumption, high speed switching, low voltage operation, high integration density, better scalability, simple structure and CMOS compatibility.In this paper, the performance and resistance switching mechanism of Cu/ZrO2/Pt device is studied, which has good bipolar resistance switching characteristics. By analyzing the I-V curve of Cu/Zr O2/Pt device, we find that Cu/Zr O2/Pt device have the multi-level storage potential. Through controlling the compliance current in Set process, the multi-level storage can be achieved in the Cu/Zr O2/Pt device. Based on literature, We learned that growth of nanocrystalline on the surface of the bottom electrode can enhance the electric filed locally in the resistive layer, so that the conductive filament will grow preferentially along the nanocrystals, making the dynamic growth process of conductive filament more control,which improving the performance of the device. We simulate the electric field in the RRAM device containing nanocrystalline structure by COMSOL software and prove this method does work qualitatively. Through testing the Cu/Zr O2/Pt device, we hypothesize that the presence of two conductive filaments in the resistive layer and simulate the growth process conductive filament. We fabricate the Au/Ti O2/Au device and simulate the process of proton irradiation on Au/Ti O2/Au device by SRIM software, SRIM software can simulate the dislocation damage and the amount of vacancies due to radiation by the charged particles at the different depths in the resistive layer. When the fluence of particles is determined, the particle fluence multiplied by the number of vacancies or dislocations can get the number density of the vacancies or dislocation density, it is helpful for us to research the radiation characteristics of RRAM, laying the foundation for research on the anti-radiation characteristics of RRAM in the future.