Study On The Resistive Mechanism And Resistive Switching Properties Of Silicon Oxide Based Resistive Switching

With the rapid development of science and technology, the need of data storage is growth, which result in memory should be bigger storage density, longer working life, lower cost of product and lower power consumption, and so on. Nowadays, the flash memory, the mainstream product of nonvolatile memory, will get close to theoretical physical limitation of flash memory. So many of next generation memory is intensely researched. Among all of the new generation memories, RRAM, resistive random access memory, is one of the potential candidates due to its outstanding memory properties, like high storage density, high speed, ease fabrication, compatible with silicon process technology and so on. In the past decades, the resistance switching is found at many materials, but the mechanism is still not crystal understanding completely. And RS material must compatible with CMOS technology for stepping forward to industrialization. In this thesis, silicon oxide, mostly compatible with CMOS technology, would be one of the best choice of RS material. The optimization of its RS property and study of its mechanism would be the key part of this thesis.In the thesis, the samples would be fabricated. According the analysis of conclusion, the resistive switching model of the resistive switching memory working mechanism would be established.Firstly, the introduction of development of RRAM would be demonstrated. Then, the Cu/Si Ox/Al structure is chosen and studied. The multi-level storage property is found that three low resistance states, the level1,2 and 3, can be obtained by adjust compliance current so that the number of strength conductive filament could be extended under controlled.Secondly, the Cu doped silicon oxide resistive switching memory device is made. It turn out that Cu doping can effectively improve the uniformity and endurance of the device, decrease the operation voltage and obtain forming-free as well. And it would be enhance the endurance of the device with insertion of a tungsten layer in silicon oxide film due to keeping function layer from copper injection excessively.Finally, the resistive switching characteristics of silicon oxide without active metal electrode are studied as well. The resistive switching memory device of W/Si Ox/Pt structure is established, and it’s found that there are different characteristics when different operation methods are made. It turns out that the oxygen’s release and gather is the main reason for the different characteristics.In conclusion, the studies on silicon oxide based RRAM shows the potential to be the next generation nonvolatile memory. It would be helpful for RRAM’s industrialization and for the RRAM’s establishment, optimization and mechanism, and so on.