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Research Of Parallel Write Operation On The Chip Based On The Current Constraints Of Phase Change Memory

Posted on:2016-02-16Degree:MasterType:Thesis
Country:ChinaCandidate:Z G ZhaoFull Text:PDF
GTID:2308330461984227Subject:Computer Science and Technology
Abstract/Summary:PDF Full Text Request
The technology related processor and memory,which are the main parts of computer, has been greatly improved and speeded up. Duing to the limitation of the device characteristics, the main memory being widely used is seriously behind the processor speed. Memory wall is a prominent problem, which is need to be resolved quickly. At the same time, the integration level of the existing main memory device is close to the limit of current technology. The energy consumption and heat dissipation per unit area is growing problem, which has become the main bottleneck of computer system performance enhancement. DRAM is used widely as the primary storage on the main memory. From the birth of DRAM till now, to improving its various performance indexes significantly is scarcely possible. The architecture and material properties of DRAM restricts solving the problem of high-energy consumption. How to solve the existing problems of main memory, is currently one of the focus of researchers.Among all kinds of computer systems, especially among large ones, the system occupied a large number of hardware resources, and the energy consumption of the system were multiplying. People pay more and more attention to the problem of the energy cost. The energy consumption rising sharply, which bring threat to the stability of the system, and reduce the security of the system operation. Therefore, reducing the energy consumption is the main objective based on improving the technology and changing the storage material. That has a very profound practical significance in the next generation of storage system.Due to the intrinsic characteristics of DRAM technology, many researchers will look for other alternative storage device as the research direction. Phase Change Memory is one of the candidates, which has the development potential extremely as the nonvolatile storage medium. It has received extensive attention of academia and industry relying on low energy consumption and high scalability and nonvolatile. Because of the material properties and the limitations of current technology, PCM can’t be used as main memory, which need to do further research on improving access speed, wear-leveling, hardware error correction, bad block reuse and controller optimization. In these problems, how to improve access speed is one of the key links whether PCM can be used as main memory.This paper is based on the other scholars research. In the paper, we study the various existing scheme which can increase memory access rate, and analysis the advantages and defects of these scheme. Finally, we give a scheme of parallel write operation in one chip based on the current constraints. In our scheme, we add a current pool in the chip. It can be used to monitor current usage when the memory run the read and write operations. Then we use other’s write scheme,which can proofread the new and old data and reduce the operation of bits updated. In this way, we can try to control and reduce the current consumption on every access operation.Basing on the current pool, we can get some information about the current consumption at the every access operation. This information will help us to arrange more access operation to be paralleled under the chip current quota constraints. By out scheme, the performance of PCM access will be improved significantly.
Keywords/Search Tags:Phase Change Memory, memory access, parallel, current constraints
PDF Full Text Request
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