The Switching Characteristics And Percolation Network Mechanism Of Silicon-Based Resistive Switching Devices

Resistive random access memory (RRAM), as a newly developed memory, combines the high density of Flash and fast read and write speed, high retention of DRAM. Based on a lot of prior qualities, it is also been called super memory. The device size of it can be scaled down to under 10nm, which is competitive in dynamic market. Silicon-based resistive switching devices have been superior for easy fabrication, low-cost, and full compatibility with current CMOS technology. This work is based on two major silicon-based resistive switching devices:Ag/a-silicon/p-silicon, and Ag/SixC1-x/p-silicon, their fabrication processes, resistive switching characteristics, and percolation based switching mechanismFirstly, we introduced the development of semiconductor memories, the advantages and disadvantages of different kind of memories. Then we discuss the several mechanisms of RRAM, the major parameters of RRAM, such as set/reset voltage, on/off ratio, etc. The common fabrication procedures for devices. The third and fourth parts focus on the analysis of the two kinds of devices, their switching characteristics and percolation network based conducting mechanisms.Our devices are typical bipolar devices, which showed high on/off ratio and reliability. Meanwhile, we use percolation network theory as a basis to explain our device (with disordered insulator layer) switching characteristics, which is consist with the experiment results. We believe this is meaningful for the development of switching mechanism theory.