Research On Optical Effects Of BiFeO₃/Carbon/BaTiO₃ Multilayer Resistive Switching

With the rapid development of information age,people's demand for memory read and write speed and storage density is higher and higher.So developing the next generation of high-density fast memory is imminent.At present,the mainstream memory includes magnetic memory,ferroelectric memory,phase change memory and resistive variable memory.Resistive memory is the most promising way to become the next generation of new memory.RRAM is committed to the resistance switching effect,resistance switching effect for bipolar resistive switching and unipolar resistive switching,the difference between them is that the amplitude of resistance switching state switch depends on the electrode polarity or voltage,depending on the polarity of the voltage switch is bipolar resistance,dependent on the amplitude of voltage is unipolar resistive switching two,the resistance switching effect can be applied to variable resistance memory.There are three important parameters to measure the quality of the resistive memory,the first is the I-V scanning loop number;and second is the ratio of the high and low resistance states;the third is to maintain time and maintain a longer switch time than I-V.The more the number of scan cycles,the better the resistance switch effect is.It is more suitable for the research and development of access devices.The resistance switching effect of the resistive memory is regulated by a variety of situations,which are divided into two internal and external situations.The internal situation mainly includes the structure design of the device,the properties of the material itself and the manufacturing process of the sample.External conditions include external bias,annealing,light intensity,test temperature,and magnetic field strength.In order to study the resistance switching effect and the mechanism of the memristor unit of single layer,two layer and three layer thin film,and the effect of light on the memory resistance of some devices is explored,this paper mainly studies the influence of light intensity on two kinds of structure resistance switch effect of BiFeO₃/Carbon/BaTiO₃ and BiFeO₃/BaTiO₃,and the mechanism of resistance switch effect of Carbon film.BiFeO₃,Carbon,BaTiO₃ of the three kinds of materials have a lot of research showed that the resistance switching effect is significant.By designing a new type of nonvolatile memory devices,we study the resistive switching phenomenon and mechanism of the devices,which is helpful to explore the application of multi-functional materials in non-volatile memory parts.This experiment adopts magnetron sputtering technology for Ta/BiFeO₃/C/BaTiO₃/Si,Ta/BiFeO₃/BaTiO₃/Si and Ag/C/Si three kinds of resistive memory devices.The related characterization was performed by X ray diffractometer?XRD?,scanning electron microscope?SEM?and other equipment.The test results show that the samples of several structures exhibit excellent resistance switching effects,including high switching ratio,excellent fatigue resistance,and longer holding time.According to the I-V curve obtained from electrical test,we can conclude that the resistance switch effects of all three structures are bipolar,and all the resistive switching effects can be explained by using the trap and release model of carriers in the material.Finally,we study the change of external conditions,the influence of light intensity on the resistive switching effect of Ta/BiFeO₃/C/BaTiO₃/Si and Ta/BiFeO₃/BaTiO₃/Si,it is found that the light intensity can well regulate the resistance switching effects of the two structures and have good quality parameters.