Study Of Biomaterial Gelatin Film Based Resistive Switching Devices

Resistive memory(RRAM)is a new type of non-volatile memory devices with bipolar resistance switching characteristics,which is also known as memristor.Memristors have simple device structure,low power consumption,high read and write speeds and they are easily to be integrated with other electronic devices,thus having great potential to be the next-generation of storage devices.Compared with inorganic materials,organic materials have many advantages such as easy film formation,low cost and biodegradability,which will have broad application prospects for the future flexible electronic devices.In this work,I have fabricated and tested the gelatin-based resistance memory devices,showing that the devices have a good performance.I have also explored the devices with different substrates and different metal electrodes.Results show that the gelatin-based memristor has a huge potential for application and further development.The research achievements are as follows:1?The gelatin-based Au/gelatin/Ag memristor has been designed and fabricated.The results show that 70?m is the suitable line width for the cross-bar devices.The metal diffusion problem has been suppressed by using a proper mask design.A set of mature resistive memory processes has been developed,which forms the solid foundation for the study of gelatin-based memristor.2?The W/gelatin/Mg structure RRAM has been successfully fabricated with an on/off resistance ratio of?104,and by using conductive atomic force microscopy measurement,we observed the conductive filaments once the low-resistance state if formed,which confirmed that the conductive filaments are responsible for the mechanism of resistive switching behavior.Repeated tests over 80 times on one device showed that the device has a stable set voltage;the device retains the data afLer more than 106s,showing that the device has good sustainability.The W/gelatin/Mg structure degradation experiments also demonstrated that the gelatin memristor has good degradation characteristics.3?The influence of different processing factors on the performance of W/gelatin/Mg device has been investigated.Through the experiments,it was found that the optimal thickness of gelatin is about 80nm and the optimal baking temperature of the gelatin films is about 105?.The ?-? characteristic have been investigated in the temperature range of 24?80?,it was found that the set voltage decreases with the increase of temperature,the device loses its resistive switching behavior at temperatures over 80?,.4?The results also show that the resistive switching behavior of gelatin-based memory is the intrinsic properties of gelatin.?-? characterization indicates that the characteristics of the devices are not dependent strongly on the type of the metal electrodes and as well as the type of substrates(glass,gelatin,and PLA)used.It demonstrated that gelatin can be used as the dielectric layer to fabricate high performance resistive switching memory devices.