The Switching Characteristics And Sub-band Transport Mechanism Of Al_xO_y-basic Resistive Switching Devices

Flash is the most widely used non-volatile memory, due to the existence of the problem of coupling between devices, limiting the size further decreases, urgent need to find alternative new non-volatile memory, in order to meet the needs of the development of information technology. Resistive random access memory (RRAM) as one of some new non-volatile memory, with a simple structure, integration of high, low power consumption, high conversion rate et al. It has become one of the research hotspot in recent years. Alumina is an important medium material in CMOS technology, and the alumina-basic RRAM has great potential. In this paper, the resistive variation characteristics and state transition mechanism of Ag/Al_xO_y/P-Si are studied.In this paper, the development and characteristics of semiconductor memory are reviewed, and some determination of state transition mechanism of the resistive random access memory is introduced. Atomic layer deposition technique (ALD) was used to deposit alumina thin films, and the metal silver electrodes were prepared by sputtering. The ?-? characteristic curves were used to characterize the storage capacity, and the structure characteristics of alumina thin films were analyzed by X-ray photoelectron spectroscopy (XPS). Finally, according to its structural characteristics, the RRAM state transition mechanism of the Ag/Al_xO_y/P-Si structure is well explained by the sub-band model.Test results show that the Ag/Al_xO_y/P-Si devices are bipolar in different sizes and have no Forming voltage characteristics, and the parameters of the devices are discrete. The characteristics of the temperature variation indicate that the open state resistance (Ron) exhibits a class of semiconductor properties, which detennines the rationality of the sub-band conduction mechanism.