The Research Of Optical And Electrical Properties Based P-type Zn₃P₂Nanowire Arrays Devices On Rigid And Flexible Substrates

Because of the special physical and chemical properties, one dimensionalsemiconductor nanostructure materials have attracted scientists from many areas carrying outtheir research work. For example the application of FET not only needs n-typesemiconductor nanostructure materials but also p-type semiconductor nanostructurematerials. However, due to the relative lack of high quality p-type semiconductornanostructure materials, zinc phosphide (Zn3P2) as one of the important p-typesemiconductors has attracted much attention. It is not only a kind of good material for FETsbut also for photodetectors. To realize nanomaterial based logic gates and integrated circuitsin a large scale, it is essential to obtain controlled attribution of the nanostructure materialson substrates. The assembly of aligned nanowire arrays can solve the problem to some extent.Hence, the researches on FETs and photodetectors which are baesd on aligned zincphosphide nanowire arrays are particularly important. The main contents are described asfollows:(1) The Zn3P2nanowires were prepared via a chemical vapor deposition method. Thedisordered nanowires on Si substrate were orderly transferred to SiO2/Si substrates (rigid)and PET substrates (flexible) using the contact printing method. Then, the fabrication ofFETs and photodetectors based on the two kinds of substrates was completed by processessuch as lithography and so on.(2) The electrical properties of single Zn3P2nanowire based FET on SiO2/Si substratewere measured, the device exhibited the characteristic of p-type FET. The gate voltage hadgood regulation and the device mobility was about34.5cm2V-1s-1with the Ion/Ioffof about103.The measurement of electrical properties of the aligned Zn3P2nanowire arrays basedFET was also conducted, the device also exhibited good p-type FET characteristic and theIon/Ioffwas about103.(3) The parameters such as wavelength and light intensity of the aligned Zn3P2nanowire arrays based photodetector on SiO2/Si substrate were studied. According to theresults, the photodetctor had a better response to wide wavelength. When the wavelengthwas fixed at620nm and the light intensity was kept constant at0.7mW/cm2, theresponsivity (Rλ) of the present photodetector to620nm light was calculated to be617A W-1 at the voltage of2V and The photoconductive gain (G) was about1376.(4) The research of the aligned Zn3P2nanowire arrays based photodetector on flexiblePET substrate was carried out based on the parameters such as wavelength, light intensity,the bending angles and bending cycles of the device and so on. Under the same conditionwith the rigid SiO2/Si substrate, the responsivity (Rλ) and the photoconductive gain (G) ofthe flexible photodetector were600AW-1and1200, respectively.