| As metal oxide semiconductor field effect transistors (MOSFETs) near the ballistic limit, new devices must be created to facilitate the future of transistor research. Nanowires have recently been explored for VLSI technology. In order to better understand the function of nanowires in future technology applications, it is necessary to explore their characteristics as MOSFETs. This work seeks to establish a basis for future nanowire characterization. We characterize nanowire transistors from IME Singapore, and analyze the results through comparison to simulation. Our results show that nanowire transistors have good electrostatics with decent carrier velocities and mobilities. The major problems, however, arise in determining the series resistance and the gate capacitance of the devices. We explore various methods for determining the values of the series resistance and gate capacitance. |
