| Organic Field Effect Transistors (OFETs) have achieved rapid development since thefirst one appeared. As a fundamental component in the organic electronics, due to their ownattractive advantages such as low-cost, flexibility, etc, they have been successfully applied tothe detector, electronic newspapers, price tags, smart cards, sensors, active matrix driver.Among OFETs, the ambipolar organic field effect transistors (AOFETs) in which both holesand electrons can be simultaneously transported are indispensable to achieve practicalapplications to complementary integrated circuits and the organic light emitting field effecttransistors (OLEFETs) combining the switching function with light emission. Recently, th-e AOFETs have become a hot research topic.In this dissertation, firstly, the development overview of the OFETs at the various stageswas reviewed. The applications at different aspects and research significance about OFETswere summarized. The problems in their development process were analyzed. Simultaneously,the prospect for the future development of the OFETs was forecasted. And then the devicestructure, materials and preparation method of the OFETs were introduced.In this paper, the AOFETs with heterojunction of different organic semiconductor havebeen fabricated. Pentacene was used as p-channel materials. C60and P13were used asn-channel materials. The OLEFETs based on P13/DH6T were explored on the basis of theAOFETs. The major work is summarized as follows:(1) AOFET based on pentacene and C60as active layer, PMMA as insulator layer andITO as substrate and gate electrode have been fabricated. MoO3as a modified layer and Alwere used as bilayer electrodes. The first device was fabricated by depositing C60asthe first active layer on PMMA. And pentacene was deposited on C60. The devicesexhibit a hole mobility of1.481×10-3cm2/Vs and an electron mobility of4.755×10-3cm2/Vs.The second device was fabricated by inverting the deposition sequence of C60and pentacene.The devices exhibit a hole mobility of5.571×10-4cm2/Vs and an electron mobility of1.713×10-3cm2/Vs. The performance of the first device is better than the second one.(2) AOFET based on P13and pentacene as active layer, PMMA as insulator layer andITO as substrate and gate electrode have been fabricated. The P13was deposited firstly onPMMA, and then pentacene was deposited on P13. In the device, MoO3and Al were used asbilayer electrodes. The properties of AOFET appear after adding the MoO3ultrathin layer.(3) The feasibility of OLEFETs‘fabrication was analyzed. And then the OLEFETs basedon DH6T and P13as active layer, PMMA as insulator layer and ITO as substrate and gateelectrode have been explored. The devices show the bipolar transmission characteristics, butthe light emission does not appear. |
