Research On N-hybrid-Thiophene-based OFET Ith Solution Method

After the advent of inorganic electronic devices,electronic devices based on the prospect of an organic semiconductor have come out as time goes on and more and more broad.Among them,there is a thin film transistor airport,referred to organic thin-film transistor(OTFT),which has experienced years of investigation and been a hot spot of research.In this paper,the P3HT(Poly 3-hexylthiophene),BFTTME and BFTTMD are used as the active layer materials to prepare the organic field effect transistor using the spin-coating method and vapor deposition on a silicon substrate.Different concentrations of the active layer material is doped preparation OFET,discuss its electrical properties,surface morphology,crystal phase changes and mechanism.In addition,an organic field effect transistor with a side gate structure was fabricated by the method of ink jet printing,which was based on photo paper,and the silver electrode,organic active layer and dielectric layer were prepared.Through the experiments in this paper,the following experimental results are obtained:The BFTTME and BFTTMD are used as the active layer materials to prepare the organic field effect transistor.The OFET can get 10-3 cm2 V-1 s-1 over the carrier mobility and more than 104 current switching ratio.The P3 HT is doped in BFTTME used as the active layer materials with nine different concentrations.When the doping ratio is 20%,the corresponding organic field effect transistor has the best performance.The carrier mobility is 1.2×10-2 cm2 V-1 s-1 and switch ratio reaches high 104.The silver electrode,the active layer and the dielectric layer were printed on the photo paper using an inkjet printer to prepare the organic field effect transistor of the side gate structure.The carrier mobility of the device reaches is magnitude of 10-3 and the switch ratio can reach magnitude of 102.