Research On Properties And Building Of Resistance Random Memory Based On ZnO Thin Film

In the current digital, technology and information age, the semiconductor memory hasbecome an integral part of everyday life and office. However, as a mainstream nonvolatilememory，Flash memory (Flash) have exposed more and more shortcomings in the shrinkingtrend of semiconductor process feature sizes. Its structures and the shortcomings of thestorage mechanism limit the flash to the further development of high density, high speed andlow power consumption.As one of the new generation of nonvolatile memories, resistance random memory(RRAM), due to its fast operating speed, low work voltage, simple structure and highintegration density advantage, have become one of the contenders of next generationmainstream nonvolatile memory. Beside it’s compatible with CMOS technology, low powerconsumption; it exhibits a lot of potential applications, and has been attracting muchattentions and researches.This article selects ZnO materials as a resistance switching (RS) layer, and prepares theCu/ZnO/Al RS unit. We use RF magnetron sputtering system to prepare the RS layer, andX-ray diffraction (XRD), atomic force microscope (AFM) to analyze the film surfacemorphology. Then we use semiconductor parameter meter (SPA) to test the RS characteristics.The main research content includes:1、Using electron beam evaporation system deposits Cu、Al as the top and bottomelectrode respectively. Using magnetron sputtering grows ZnO thin films, and researches theinfluence of electrical properties with different target spacing, oxygen partial pressure and thepressure in the process of growth of film. Then we get the optimal growth parameters: targetspacing of6.5cm,40%oxygen partial pressure, and1Pa working pressure.2、By changing the function layer thickness and unit size of the ZnO, we study itselectrical performance changes. Series works of improvement of the RS characteristics havebeen done with taking the conclusion above into conclusion in this paper. Then we try to findpractical laws about the influence on electrical performance of the dimensionally changing ofresistance switching unit.3、Based on the first two steps, we get the prepared Cu/ZnO/Al resistance switching unitswith good performance. The unit is free-forming and its reset current range could becontrolled in200μA to400μA. Our works achieve the goal of getting low power consumption,and also analyze ZnO RRAM conductive mechanism preliminarily.