Study On The Electrical Conduction Mechanism And Properties Of TiO_x-based Rram With Ion-doping

The study of RRAM has been for decades,but the mechanism of the resistance switching is still unclear,which is still the focus of attention.At present,there are two types of RRAM device: the ionic resistance switching and electronic resistance switching.Ionic resistance switching has many advantages,such as outstanding performance of endurance and retention,but,accompanied with high power consuption and weak reliability.Conversely,the electronic resistance switching has many other advantages,such as the good uniformity,low power consumption,and so on.This paper study on the electrical conduction mechanism and properties of TiO_x-based RRAM with ion-doping,hoped to improved the performance of endurance and retention.In this paper,the top and bottom electrode of the experimental samples were prepared with electron beam evaporation,the ion-doped titanium oxide layer was prepared with multifunctional magnetron sputtering device.Using semiconductor parameter analyzer to test the electrical properties of device and analyze the mechanism of resistance switching.The following experiment were designed in this paper.The contrast experiments were designed obout changing the thickness of the dielectric layer,the doped ion and the doping concentration.This proved that the performance of device was improved with Al or Si ion doping,and the doping concentration is one of the most important factors to control the performance of RRAM.Finally,the best preparation conditions were obtained.The paper hopes to obtain the higher performance of electronic resistance switching device,and to make its own modest force for building mechanisms of ion-doped electronic resistance switching device.This paper studied the mechanism of resistance switching of Al/TiO_x/Al devices,proved that this device has an asymmetric potential barrier and follows space-charge-limited conduction(SCLC)behavior,and the main reason of the poor performance of the un-doped device is the decrease of trap depth and defect density.Through the study of the temperature testing of all components,estimating the activation energy values of each device under different cycles.This proved that the doped process effectively deeped initial trap depth of the devices and improved the performance.This paper innovatively use the doping technology to improve the performance of the electrical resistance switching,and studied the mechanism of the resistance switching.In general,this study provided the theoretical implications and practical guidelines for studying the electrical resistance switching and the preparation of higher performance devices.Finally,we compared the TiO_x-based RRAM with Al-doping to the ionic RRAM,and analyzed the performance of these devices.Showing clear direction for future research.