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The Study Of Ion Migration Failure During Package Module THB Reliability Test

Posted on:2014-05-03Degree:MasterType:Thesis
Country:ChinaCandidate:P ChenFull Text:PDF
GTID:2298330431973689Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
In recent years,with the continuous development of the semiconductor integrated circuittechnology, various materials and circuits integrated made the electronic products structurebecomes very complex, due to the optimization of process technology, multi-functionalintegrated circuit products dimensions become smaller accompanied by complex processes.The circuits electrical terminals continue to shrink the distance is one important feature.Water condensation between these electrical terminals caused the metal ion migration byelectrochemical reaction started to become a common failure mode.This article describes the package module failed during THB (temperature humidity Bias)reliability test was observed that the dendrite growth between resistor terminals. Thefailure was confirmed caused by ion migration under electrochemical reaction by electricalfailure analysis and physical failure analysis. Based on the failure mechanism, thecondensed water of the reliability test chamber was screened out as root cause through thecontrast experiments investigation, while further analysis of the appropriate correctiveaction to avoid the water condensation on the reliability test chamber.
Keywords/Search Tags:Reliability test, Ion migration, Dendrite growth
PDF Full Text Request
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