Study On The Yield Improvement And Process Stability Of GaN LED Grown By MOCVD

The topic of this paper comes from the’863Project’ of the ’twelfth-five’Plan. The yield plays an important role for the widely used of the GaN-based light-emitting diodes (LEDs). It is a key problem for the yield improvement and its reliability of the GaN LEDs.The yields of the wavelength (WL) and the standard of the wavelength (WL-STD) are the main yield indexes of the GaN based LEDs production. The WL-STD is the uniformity of the single wafer while the yield of the WL characterizes the uniformity among all wafers in a process run. In this paper, we study the yield improvement of the WL-STD and the yield stability of the WL and WL-STD.We systematically investigate the hardware of the VEECO K465metal organic chemical vapor deposition (MOCVD), the choice and the treatment of the growth tools and the process conditions. The improvements of the yields of the WL and WL-STD are studied by many methods, such as the choice and bake conditions of the susceptors and the temperature change modes of the active layers.The innovative point of this paper is that we give a method to choose and bake the susceptors. Besides, we explore a way to solve the nonuniform WL of the inner wafers and obtain the prefer temperature decrease mode for the quantum well. By the help of these methods, we can improve the yield of the WL-STD and its repetitiveness of GaN based LED grown by MOCVD.