Via Plasma Etching Process Study And Improvement

With the rapid development of global information industry today, the world hasentered the era of integrated circuit technology, nano. Over the years, the IC industryhas been to3-4times the growth rate of the national economy rapid development, newtechnology, new products continue to emerge. At present, the linewidth mainstreamtechnology international high-end integrated circuit is0.13~0.25micron, linewidthinternational high-end integrated circuit technology is0.065~0.13micrometer. Thelinewidth is doing more and smaller, chip integration more and higher, the demand ofhigher technical level will be continued. For a manufacturing enterprise, the productefficiency and the process quality is much more important, is the key to obtain themaximum benefit. High rate of good product, Low cycle time, means to create morevalue in the face of limited time and resources, means to obtain more profits.Dry etching performs an important role through the chip production from thebeginning to the end. Product defect must impact yield loss. Some defects are baselineconditions which can not be solved, such as physical defects in the wafer itself. Whilemost defects can be improved through the process improvement. So learn of thesedefects and solutions are much more important to improve the product quality.This paper firstly introduces the microelectronics technology, integrated circuitfor the basic process of semiconductor manufacturing briefly. Then introduce theapplication of dry etching in semiconductor integrated circuit manufacturing process.And in the end, face to hole etching process defect, make a detail explanation.Reduced rework rate of products, improved production efficiency.