CIS Device Failure Analysis And Yield Improvement

With the development of manufacturing technology of Integrated Circuit and theimprovement of IC design，CMOS Image Sensors have been widely used in manyareas because of its merits, such as low cost, low power dissipation，high integrationdensity, small extension，simple process short develop cycle．The market is ratheropen，especially in the area of digital products，therefore it is very useful and valuableto research and develop the CMOS Image Sensors．Firstly, the paper introduces the development history the research situation ofthe CMOS Image Sensors. Secondly it presents the classifications, structure andworking principle of the pixel of CMOS image sensor, in which it focus on theimaging theory, the procedure of reading, processing the image signal and importantfunction parameters of CP (Chip Probe), FT (Final Test), AE (ApplicationEngineering test). Thirdly, at the precondition of CIS manufacture, use3major FABanalysis methods combining with actually cases to do issue solvent and baselineimprovement. Finally, summary all CMOS image sensor related cases, then buildlibrary for them. And use actual experience to provide related practitioners the lessonlearnt to look up, greatly increase their work efficiency and ability to solve problemsobviously.