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Research On GaAs Unclear Radiation Detector

Posted on:2017-01-07Degree:MasterType:Thesis
Country:ChinaCandidate:X J DingFull Text:PDF
GTID:2272330503479230Subject:Circuits and Systems
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With the deep research of the modern nuclear physics and nuclear science and technology, the key theory constantly breakthroughs, nuclear technology has been more and more widely used in the modern physics, nuclear geology, modern medicine and other fields. At the same time, relevant nuclear accidents has rise greatly in recent years, like Japan’s fukushima nuclear power plant accident, have caused great damage tothe environment. So nuclear technology and public safety has more and more requirements to the research of nuclear radiation detector. Nuclear radiation detector ha become an indispensable tool in many field, the research has the vital significance.GaAs materials belong to Ⅲ- compound semiconductor material have superiority, Ⅴsuch as big band gap, high breakdown voltage and strong anti-radiation, stable chemical properties and a series of other advantage with other semiconductor materials do not have. Made of GaAs base or GaAs device, the device response sensitivity, linear response, performance has great advantage, therefore it has used in the field of nuclear radiation.This paper we firstly introduces the classification of the nuclear radiation detector and the related properties of GaAs material, Results show that the thickness ofi layer is 3μm,the doping concentration ofi layeris 1×1015/cm3, the thickness ofN and P layer is 6μm and 8μmrespectively, the energy of incident particles is 5.486 MeV, the environmental temperature of 320 K can get ideal detector performance. Second, we obtained a large amount of data by software simulation. By changing the parameters of the device, we obtained the relevant performance data in GaAs nuclear radiation detector response ability under the irradiation of alpha particle. Third, we expounds its working principlemain and the preparation methods of GaAs device, we discussed the preparation and optimization of device ohmic contact in this article at the same time,introduces the lithography process and the draw of light rigid in the process, the leakage current of detector is less then 7.9μA.Finally, the optimal simulation result of GaAs nuclear radiation detector structure has a guiding significance.
Keywords/Search Tags:GaAs-based nuclear radiation detectors, ohmic contact, preparation technology, electrical properties
PDF Full Text Request
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