Research On GaN-based Unclear Radiation Detector

Ga N is a type of material with wide band gap,high anti-radiation and high covalent bond energy.All these making it an ideal material for using in semiconductor unclear radiation detection field.The commonly uesd Si-based detectors is limited by its poor performance in high radiation environment.So,it’s really necessary to starting the research on Ga N-based nuclear radiation detectors.Firstly,the classification of unclear radiation detectors and related properties of Ga N are introduced in this paper.While,the mainly preparation methods and the principles of each method are elaboratly presented.Secondly,we studied the ohmic contacts on the Ga N materials including alloys programs and annealing processes.Then,we talked about the lithography process and the drawing of masks.At the same time,the electrical performance of the device are simulated. We also simulated the detection of Ga N-based unclear detection to α particle. We found that with the increase of α particle, the charges collecting and the range of α particle will also increase.Meanwhile,we detaily descripted the preparation process and parameters for each step.Finally,we tested the quality of the Ga N epitaxy and the electrical properties of Ga N-based nuclear radiation detectoes.As the reverse bias voltage is applied at 100 V,the current density is 9.9μA.It’s already satisfied the requirements of being a unclear radiation detector.Then we forecasted the future work.