Study On The Structure Design And The Fabrication Of The Fexible LED Arrys Device

The rapid development of science and technology in modern society hascompletely entered the information age. For the mobile phones, TVs, game consolesand other high-tech products more and more high resolution requirements. And putforward higher requirments for small size at the same time. LED because of highbrightness, low operating voltage, low power consumption, small size, long life,impact resistance and stable performance and other advantages have become the mainresearch goal of modern display field. Combine the LED with traditional MOEMStechnology can produce higher resolution and flexibility that can be attached to thearbitrarily curved or irregular surface micro flexible LED array.Micro flexible LED not only has the advantages of traditional LED, it also can bearbitrarily bent. So it has many applications in the display, military, medical, daily lifeand so on.In this paper, we study on the theore and experiment of the micro flexible LEDarrys. Fistly, we introduced the application and development of micro flexible LEDarrays. Secondly, study on the theore of the PN junction of the micro flexible LED.When the voltage load at2-2.33V, the chips will get good work consistency. Next, wedesign the structure of the device based on the theoretical studies and research on theapplication. And determine the LED unit transverse size, thickness and spacing. Alsomake sure of the upper and lower eletrode basic shape, structure size and layout. Thenthe structure of the flexible arry device connection materials and flexible substrates were selected, and research for the technology of preparation and molding technologyof the flexible material that can be compatible with the fabrication process such ascoating, film and reticle. At last, study MOEMS process on a common wafertechnolohy for pixel segmentation method. Focus on exploring for making the fexiblesubstrate of the device isolation trench thinning and production methods, explore thehigh-doped GaP, GaP, AlGaInP, and n-GaAs etching technical conditions.