Study On Scale Production Of Research Of Epitaxial Wafer Of AlGaInP Red LED Used In The Display Screen

The light emitting diode structure with GaAs/AlAs DBR mirror structure of indium gallium aluminum phosphorus strain quantum well was designed on the basis of theoretical calculation in this paper. We got the strong luminous intensity, good uniformity, high photoelectric conversion efficiency of625nm red LED epitaxial wafer through a large number of the test in the process of production, optimize the epitaxial growth temperature, the dependent variable, DBR structure, layer thickness, doping, by using the advanced MOCVD epitaxy equipment. Epitaxial materials were tested by X-ray double crystal diffraction, optical fluorspar spectra, electrochemical C-V, scanning electron microscope, to prove quality of epitaxial growth, doping, light wavelength, the material thickness meet the design requirements. After some process flow, epitaxial wafers were fabricated into chip220um*220um size, and proved that the brightness was more than160mcd, the wavelength was623±3nm,and the voltage was less than2.1V. We also realized the red epitaxial wafer mass production with good brightness, wavelength, voltage, consistency, repeatability on the basis of the MOCVD optimization. The epitaxial wafers we produced meet the needs of the market for display applications.