Processing And Testing Of Graphene Field-effect Transistors

Graphene was discovered a decade ago, research on graphene has been a hot spot athome and abroad, Graphene is hope for the future to become the most widely usedsemiconductor materials, Graphene field-effect transistors because of its ultra-high frequencyresponse and ultra-small size to become the trend of next-generation semiconductor devices.This article focuses on graphene field effect transistors from the structural design, theelectrical properties of the test preparation process and other aspects of research. The mainwork is as follows: The article introduces the basic electrical properties of graphene, it ismainly about the band gap modulation and electrostatic field modulation principle. It showsfour kinds of graphene bandgap modulation method, a detailed analysis of how changes in theFermi level of graphene，and changes in the carrier type and concentration of the result. Thearticle shows two basic structures of graphene field effect transistor, they are different ongate width, gate position and gate dielectric layer thickness, thus to compare the differentparameters of the field-effect transistor properties of graphene. And I design the maskgraphics based on L-Edit. According to the design of the masks, it gives process aboutgraphene field-effect transistor, the main narrative are several important steps in the overallprocess, it analyses the impact of etching graphene material, and it give a reasonable step tooptimize the process. The article gives testing and optimization of graphene field-effecttransistors, it mainly tests IV curve and the Dirac point curve of graphene field-effecttransistor, comparative analysis the basic properties of top-gate graphene field-effecttransistor structure and the back gate structure of graphene field-effect transistors, so as toarrive: top gate structure of graphene gate field effect transistor switch is superior modulationand graphene back gate field effect transistor structure. The first test of the thermal effect andthe photoelectric effect graphene conductive channel, and it analyses the effects oftemperature and light intensity of the internal mechanism of the graphene material carriers.Finally, according to a comprehensive process and test data I give graphene field-effect transistors optimized design.,the design of graphene field-effect transistor gate recessstructure and dual multi-gate graphene field-effect transistors, made detailed parameters andmask graphics.