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Research On Polygon Processing Algorithms For Lithography Simulation In IC Manufacturing

Posted on:2015-01-17Degree:MasterType:Thesis
Country:ChinaCandidate:N LvFull Text:PDF
GTID:2268330425996797Subject:Circuits and Systems
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In the past fifty years, microelectronic technology has become increasingly demanding on circuit performance, especially in the field of integrated circuits. As the core technique of integrated circuit(IC) manufacturing, the rapid development of lithography technology has successfully enable the shrinking of integrated circuit size from micrometers into nanometers, which makes the modern integrated circuit more complicated in scale and functionality. In recent years, the mainstream semiconductor manufacturing technology from90nm,65nm transferred to40nm,28nm and below, which means that smaller critical dimension(CD) require more advanced manufacturing processes and more accurate manufacturing processes, to improve integration circuit performance, lower power consumption. Therefore the patterns fabricated on the wafer exhibit apparent distortions, then produce optical proximity effects(OPE), which may affect the manufacturing yield of integrated circuits.Semiconductor manufacturing community adopts many kinds of resolution enhancement technology to tackle this challenge. These techniques aim to reduce the influence of optical proximity effect in the manufacture of integrated circuits, so that in the existing production environments, it can be manufactured as a smaller feature size of integrated circuits. No matter what technology is used, we need to accurately predict the image on the wafer.This paper studies the processes of the IC manufacture, and proposes the polygon processing algorithms based on the theory of partially coherent, and splits polygons into a plurality of rectangles or triangles. Furthermore, we use C language to design a complete lithography simulation system in the Linux operating system by studying the principles of lithography. The specific optical parameters in this system are:the wavelength of source is193nm, the numerical aperture has a dynamic range between0.3and0.8, and the adjustable range of partially coherence factor is between0.2to0.8.
Keywords/Search Tags:Lithography Simulation, Optical Proximity Correction(OPC)Polygon Segmentation, Partially Coherent Imaging, Sparse Point Intensity Calculation, Layout Processing
PDF Full Text Request
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