Study And Optimization Of IGBT Half-bridge Module Parasitic Inductance

With the power electronic technology has been more and more widely used in high voltage and high power applications, such as power system, the voltage rating and current rating power electronic converters tackle with increased rapidly, resulting in the demand for high power level semiconductor switching devices. When a single device can not meet the needs of applications, the use of power modules which internally package two or more devices to achieve high power rating is an important direction to handle with high power applications.As a new fully-controlled device, Insulated Gate Bipolar Transistor (IGBT) has many superior performances compared with other power electronic devices. IGBT power modules are widely used in power electronic converters and their characteristics affect converter properties in many aspects, such as electromagnetic properties, reliability, volume, etc. Therefore, it is necessary and of great significance to study the structure and characteristics of IGBT power module. This paper focuses on the study of IGBT half-bridge module parasitic inductance problems.In this paper, the basic properties of IGBT power module are studied based on the analysis of a series of IGBT power modules, including3D structural properties, thermal properties and electrical properties, and the process of heat transfer inside power module is simulated by using the finite element software ANSYS. Then the mechanism of IGBT half-bridge module parasitic inductance is.studied. Aiming at reducing the parasitic inductance of IGBT half-bridge module and raising the efficiency of the whole practical circuit, a module structure with improved chip layout is proposed which places those chips that are in the same working circuit loop in close vicinity considering the working behavior of half-bridge module in power electronic circuits. In order to verify the validity of the new design, both the conventional and the proposed modules are fabricated in the same package size. This paper almost covers the whole manufacturing process of IGBT half-bridge module. Test circuit is built and experimental results show that the parasitic inductance of the proposed module decreased by35%compared with the conventional one without modifying the module electrodes.