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The Effect Of Fbg On The Characteristic Of980nm Semiconductor Laser

Posted on:2015-02-02Degree:MasterType:Thesis
Country:ChinaCandidate:X M ChenFull Text:PDF
GTID:2268330425993923Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
At present,980nm semiconductor laser is attached great importance, this is with close connection to its wide universality, and it is suitable for numerous type of materials, such as Er:YAG, Er/Yb glass, Er:YLF, Er:Y2SiO2, Er:BaY2Fg and so on. Two different range of laser waveband can be obtained by this laser, one range is1.55to1.66micron, another2.60to2.90micron.As the rapid development of high-speed and large capacity optical fiber communication and optoelectronic device, people pay more attention to the high efficiency coupling between980nm semiconductor laser and single mode fiber. Not only can it affect the relay distance of fiber transmission, but also it has great significant in terms of improving the performance of laser pumped erbium-doped fiber amplifier and cost performance ratio.This paper firstly introduces the basic principle and writing method of Fiber Bagging Grating(FBG), then briefly states the theoretical basis of980nm Fiber Bagging Grating semiconductor laser, finally studies the effect to peak reflectivity of fiber length, background refractive index variation and coupling coefficient by theoretical analysis, and further study and analysis to the effect of laser operating characteristics of reflectivity is done by experiment.According to the theoretical analysis and the actual measured lasing spectrum under different reflectivity, it thinks that the key for FBG-ECL to be practical is improving coupling efficiency, optimizing the peak reflectivity and bandwidth of FBG.
Keywords/Search Tags:fiber grating, 980nm semiconductor laser, fiber coupling, gratingreflectivity
PDF Full Text Request
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