3300V IGBT Cell Design With FS Structure

IGBT(Insulated Gate Bipolar Transistor) is widely used due to the advantages suchas high input impedance, large current capacity and low power dissipation. The coretechnology of high blocking voltage and new generation IGBT (such as TRENCH-FSand blocking voltage above2500V IGBT) is solely held by some large companies,resulting in our need to import products in the locomotive traction smart grid related tothe field of national security and livelihood, which seriously restricting the developmentof our country in many ways. Based on this, the tracked by the02major projects,cooperated with a domestic enterprise cooperation, work on to develop3300V IGBTwith a FS structure, and the sample tubes meet the pre-design requirements, thesuccessfully develop of our IGBT in the high-blocking voltage project d laid a certainfoundation of domestic IGBT structure design.In this thesis, the main work is:1.A brief introduction of IGBT and analysis the relationship between performanceand cell parameter. Comparing different cell structure and judge pros and cons.2.On the base of analysis, preliminary determine the parameters of cell, andaccording to mature manufacture condition to propose a process flow. Use simulationsoftware MEDICI to optimize to reach the index.3.Use the optimized cell parameters to different cell design and compare the tapeout results to pick out the best, and which turn out to meet initial requirement: blockvoltage is higher than3500V, Vce lower than2.7V, which proved the practicality andaccuracy of design.