Studying The Current Of Graphene Field-effect Transistor

gap and ultra-high carrier mobility. As a novel semiconductor material, graphene has aunique structure and excellent performance. It has aroused wide attention in chemistry,physics and materials recently.Firstly, the basic structure and energy band-gap of graphene are introduced. On thebasis of previous conclusion, we have derived the calculation process of intrinsic carrierdensity. Secondly, a modeling of single-gate graphene field-effect transistors (gFETs) isproposed and analyzed.Based on this model, we discuss the effect of surface roughness on the current as themetal/SiO2interface is not smooth, and then the current model has been modified. Theconclusion indicates that the surface roughness leads to the decline in drain current.Finally, we calculate the current in monolayer and bilayer graphene nanoribbons(GNRs) and study the impact of layer spacing on current. The zigzag and armchairgraphene nanoribbons have been built by ATK and VNL of QuantumWise. Usingfirst-principles density functional theory (DFT), the transmission of GNRs could becomputed when applying different voltages. And we map the I-V characters by the toolAnalyzer and achieve the influence of interlayer spacing.