Research On Modeling Of Graphene Field Effect Transistor

Silicon materials as the core of the traditional components is increasingly close to the physical limits,and it is difficult to meet the demand of miniaturization and high performance of electronic system.As a new type of electronic material,graphene is widely regarded as one of the core electronic materials of next generation semiconductor devices because of its excellent electrical properties,thermal and stress properties.The field effect transistor with graphene as the conductive layer as a new type of nano devices,can meet the requirements of telecommunications and miniaturization,and become the research hotspot of electronic devices.Accurate establishment of the device model,for microwave and RF circuit design is essential.In this paper,the equivalent circuit model is established and the parameters are extracted for the model of graphene field effect transistor device.The basic structure of the graphene field effect transistor is introduced,and its working principle and electrical characteristics are analyzed in detail.According to the properties of bipolar transport of graphene field effect transistor,the output characteristics,switching ratio and saturation performance are analyzed.As a feedback to the device process,the small signal equivalent circuit model was established.The initial value of the equivalent circuit model parameter extraction method and the S parameter optimization method are included.Based on the small signal model,the paper compares the similarities and differences between MOSFET,HEMT and graphene field effect transistor,and then simplified and improved the Angelov nonlinear model.Next,the nonlinear expressions of current voltage,gate source and gate drain capacitance are proposed.The whole model is embedded into the circuit simulation software,and the circuit parameters are simulated.Compared with the measured results,the model established in this paper have good accuracy and practicability.