External Conditions For Strain Quantum Well Infrared Detector To Detect The Influence Of The Peak

In recent years, with the development of the technology of molecular beamepitaxial growth, there are immeasurable impact generated on a low-dimensionalsemiconductor material. Using this production technology to combine two differentbandgap semiconductor material, a lot of research has been carried out on thissuperlattice structure because of the similarity of lattice constant and materialproperties. In this paper, taking the basic theory of Meso-piezoresistance effect as theguiding ideology, the change of photocurrent peak as the radiation energy level ofStrained Quantum well has been studied under the influence of external factors.There are many ways to calculate band structure of the superlattice quantum well.In this article, the energy band structure of the superlattice materials were calculatedand analyzed by using the theory of electronic volatility and superposition of waveinterference. The width of the sub-band and the changes of micro band under externalfactors was achieved.The article includes the following sections.(1) Analyzing the superlattice band structure principle and classification,development and application prospects.(2) Introducing the process of development of the quantum well infraredphotodetectors and it’s working principle, summed up the several detector sub-leveltransition, researching progress and applications.(3) Using the basic theory of optical transition to analyse the external factorsimpact on the absorptive spectra of semiconductor。(4) Studying the strain superlattice quantum well caused by stress，analyzing thecorresponding relationship between temperature and the sub-band of strainsuperlattice quantum well, deducing the mathmatic expression of the temperaturechange on the the sub-band in the growth direction theoryly. (5) Achieved the subband transition of quantum well caused by the distortion ofmaterial lattice constant under uniaxial stress.