Study On The Detect Peak Wavelength Of Quantum Well Infrared Photo-detector On The Temperature Change

With wide application of Nm materiales in the Semicdoctor and the development ofmeso-conversion mechanism about signal of force, power and light, various ofsuperlattice quantum well devices have been fabricated today.With the support ofadvanced technology, these novel devices can incarnate new characteristics andcapability. Based on the basic theory of meso-piezoresistance effect, and combinedwith the impact of superlattice materials due to the change of temperature. the paperinvestigates the change of absorption wavelength and photocurrent peak position forGaAs/AlxGa1-xAs quantum well infrared photo-detector(QWIP) in differenttemperature.The paper describes the structure of the superlattice detailedly and theinfluence of different temperarure. Based on the above knowledge, the paperexpounds the theoretical basis, operational principle, and analyses the photoelectricfeatures of QWIP. The paper analyzes the device performance from two aspects. Thefirst part talks about the impact of temperature on the width of the potential well andpotential barrier; The second part talks about the impact of temperature on the bandgap of materials.The main part as follows:(1) It derives the relationship between temperature and material strain; andcalculates the formula between temperature and strain along the superlatticegrowth direction with parameters of GaAs, Al0.3Ga0.7As.(2) The paper derives the formula of barrier height and temperature accordingto the relationship between band gap of GaAs and AlxGa1-xAs and temperature. Furthermore, I calculates the relationship between the temperature andabsorption wavelength of three types of transition.(3) With the simulated curve for formula mentioned above by matlab software,the paper analyses the tendency and amplitude of changes for each parameter,and the impact for the device.(4) It analyses the change of photocurrent peak position combined withphotocurrent spectrum and three groups of absorption wavelength and wavenumber under different conditions.This paper talks about theoretically the impact of changes of temperature onabsorption wavelength and photocurrent peak position of QWIP, and provides aneffective solution for the problem of QWIP bandwidth.