Preparations And Properties Of SiC Thin Films Deposited By EB-PVD

Silicon carbide(SiC) is a typical representative of the third-generationsemiconductor materials after Ge, Si and GaAs. SiC semiconductor materialsexhibit many outstanding properties, like wide band gap, high thermalconductivity, high critical breakdown electric field and the fast drift velocitysaturation. It has been widely application in the field of high temperature, highfrequency, anti-radiation, high power, etc. The electron beam physical vapordeposition (EB-PVD) is a vacuum evaporation coating method of the electronbeam as a heat source. In high vacuum conditions, the electron beam of highenergy density bombard the surface of target, its melting, evaporation andcooling deposited on the substrate to form thin films. Compared with otherthin film deposition technologies, the EB-PVD technology has an advantage inhigh deposition rate and good film quality.First, the paper describes the SiC structure, physicochemical properties,optical and electrical properties. And describe in detail the history of researchof the SiC thin films and its application status. Determine the researchbackground, contents and significance of this paper; Then, the paper describein detail the preparation of thin films of physical vapor deposition (PVD) andchemical vapor deposition (CVD).And introduce three growth stages of thefilm, including new phase nucleation, continuous film formation, film growth,etc., three growth stages of the film; paper focuses on the EB-PVD method forpreparation of SiC films and process parameters are optimized.The paper obtained by experiment and analysis that the thickness of1.5μm and2.0μm SiC films are deposited by EB-PVD on the Si<100>substrates, after the deposition time of40min and60min; in the samethickness, the higher the annealing temperature, the better the quality of SiCfilm crystallization, the lower the average film surface roughness; in the sameannealing conditions, the film is thicker, the lower the average film surfaceroughness; apply the same voltage in SiC films, current maximum measured in the UV conditions, current minimum of black room, white light between thetwo; Under the same conditions, the film is thicker, the greater the excitationcurrent.