Preparation And Properties Of FED Phosphor Thin Films

At present, displays, as the medium of people and computer exchange, play an important role. Field Emission Display (FED) is one of the most promising displays as full color FPD owing to its advantages such as wide view angle, wide temperature range for driving, high picture quality, low power consumption, high response speed, and without magnetic field and X-ray radiation. A lot of obstacles to the success of FED are lack of suitable phosphors, new electron sources for the field emission and encapsulation of FED device. Screens require new luminescent materials and fabricate technology as the one of important segments in FED. It is generally accepted that thin films phosphors have some advantages over bulk-type powder phosphors such as better thermal stability, reduced outgassing, better adhesion, and improved uniformity over the substrate surface. So the research of thin films phosphors becomes a hotspot in the research of FED screen.One of FED performance model in which broadband semiconductor act as cathode and thin films phosphors are introduced in this paper. At the same time, field emission from semiconductor, distance between electrodes and vacuum degree, atom excursion time and luminescence characters of thin films phosphors are analyzed. And some methods of FED performance improvement are discussed subsequently, which afford the academic basis in subsequent experimental research.At the opening of the dissertation, the growth mechanism of thin films is discussed. Based on the investigation of molecular dynamics and statistics physics of thin films growth, a program for the Monte Carlo simulation of the conglobation and growth of thin films on substrate is presented. It is found that the overlay degree, substrate temperature and number of atom in-group have consanguineous relation, which affect the thin films growth.Subsequently, Y₂O₃:Eu thin films, ZnO:Zn thin films, YAGG:Tb,Gd thin films and ZnS:Zn,Pb thin films have been grown on ITO substrates by electron beam evaporation method with sintered each target, and are annealed in 400℃and 600℃respectively. The construction, ingredient, surface morphology and luminescence properties of the thin films are studied. It was found that crystallization is improved, and the disfigurement on crystal surface is reformed. The luminescent properties of thin films are enhanced with the annealing temperature increase. Next step, we will integrate the cathode of diamond thin films to study the phosphor thin films deeply.