Preparation And Characterization Investigation On ZnO: Mo Thin Films

Transparent conducting oxide (TCO) thin films, for it’s high transparency in thevisible light region and excellent electrical properties, have been widely used in variousfields, such as organic light emitting devices (OLED), solar cells, and micro-electronicdevices. Impurity-doped zinc oxide (ZnO) films, as a kind of TCO films, have most widelystudied and development. Mo-doped ZnO (MZO) films are of conciderable interest forapplication recently.In this thesis, MZO films have been prepared by a magnetron sputtering system withthe ratio frequency (RF) target and the direct current (DC) target sputtering simultaneously.The influence of various conditions, such as the relative location of targets,substratetemperature,the power of ZnO target and deposited times, on the structure andopto-electronic properties have been investigated, and found the method for depositing thehigh quality MZO films. Moreover, it is clear from the test results that as the RF power,substrate temperature and deposited time increase, the resistivity of MZO films initiallydecreases and then increases with further increasing; the transmittance of MZO films havelittle fluctuation and optical band gap decreases with increasing of the RF power andsubstrate temperature; the transmittance initially increase and then shows a decrease withthe increase of deposited time; and when the RF power is326W, substrate temperature is100℃, deposited time is40min, the lowest resistivity of MZO films2.829×10-3Ω·cmhave been obtained, and the average transmittance in the visible range nearly80%.