2°Gaas Substrate For The Growth Of High Quality Gap Epitaxial Layer Research

In this thesis the growth mechanism of high-quality GaP epitaxial layer on2°GaAs substrate is discussed. Research on growth and characterization of GaP which growon epitaxial layer of GaAs with MOCVD,including the problems of GaP as a current spreading layer, the growth temperature and the rate of high temperature high velocity impact on the surface morphology growth mode and crystal quality of GaP,the photoelectric properties and structure of relationship quality of GaP. And fix the growth mode of GaP on GaAs in the situation of high temperature. Use the XRD text the full width at half maximum of shake curve,and use the high power microscope to watch the crystal surface quality.Finally we find we can get the better surface with more slowly velocity in a certain range.through a detailed analysis of the GaP FWHM and the quality of crystal surface,we optimizing the GaP epitaxial layer growth as the provides of grow high quality of GaP epitaxial layer.All of this as a basis of future production of higher brigtness, better quality, better performance of LED and lay a solid foundation.