The Preparation And Investigation Of Zno-based Lighting-emitting Diode

In recent years, because ZnO material has many unique characteristics in photoelectricfield, it has become the most high-profile material in the field of photoelectricity. ZnOpossesses a wide and direct band gap. And at the same time, it also has a large exciton bindingenergy. These advantages make ZnO materials to be the expected material to prepareultraviolet light-emitting diodes (LEDs).As a kind of indispensable exist, ZnO is a vitalcomposition to produce UV LEDs and laser diode. ZnO material is also suitable for thepreparation of nano generator, biological detector, ultraviolet laser tube and other advanceddevices.Now, there are many technologies for preparation of ZnO thin film, such as metalorganic chemical vapor deposition, magnetron sputtering technology, molecular beam epitaxy,spray pyrolysis, pulsed laser deposition, etc. Different technologies in the process ofpreparation of ZnO thin film materials have their unique advantages and disadvantages.In this paper, ZnO thin film and ZnO based LED are prepared by different technology,and the performances of ZnO films and ZnO based device are studied. Specific content is asfollows:GaAs is used as a substrate of ZnO homojunction LED. n-ZnO thin film is deposited byMOCVD, the following step is annealing treatment to achieve the conversion of n to ptype,then the p-ZnO: As thin film is completed. And then using the magnetron sputteringtechnology to sputter a seed crystal layer on p-ZnO: As layer, the sample is put in a container.CBD method is conducted to grow ZnO nanometer array. The test results show that the devicereveals good rectification characteristics. When injection current is set up to40mA, thisdevice shows obvious electroluminescent characteristics with a strong ultraviolet spectrumpeak at383nm.Selecting the sapphire (Al2O3) as substrate, and using industrialized MOCVD techniquegrows n-GaN film on the substrate. By controlling the growth parameters, a1500nm thinfilm is grown on sapphire. Using plasma enhanced MOCVD technique to deposit a p-ZnO: Nthin layer with a thickness of500nm. And after the following step of annealing treatment, aheterojunction LED with a structure of p-ZnO:N/n-GaN:Si is achieved. Test results show thatthis device reveals obvious characteristics of rectification. The device shows aelectroluminescent characteristics including a strong ultraviolet spectrum peak located at390nm.