Study On Characteristics Of Luminescence Of1.3μm Quantum Dots Materials For Lasers

The semiconductor lasers already have a wide range of research and application in optoelectronic devices and communication field after nearly half a century of development. The results of quantum dots and quantum well laser materials have improved the performance of semiconductor lasers. The nano-materials such as quantum dot materials have achieved the highest reported and widely concerned.In the thesis, we reported the InAs quantum dots with a high density of1010cm-2through adjusting the parameters of InAs/GaAs quantum dots grown by MBE technology. The peak emission wavelength from InAs quantum is beyond1.3μ m with InGaAs strain-reducing layer. The results show that InGaAs strain-reducing layer can effective to reduce strain of InAs quantum dot greatly improved the QDs quality and lead to a strong photoluminescence peak in the PL spectra detected at room temperature. PL measurements prove the good optical quality of high density InAs QDs grown on GaAs substrate...