Growth And Characterization Of InAs/GaAs Quantum Dots With High Density

Recently,quantum dot is concerned more and more,because it has incomparable advantage compared with bulk materials. Study on the fabrication of quantum dot is the most forward scientific technology and especially III-V group materials has vast prospects, which requires us to explore continuously.In this paper, we use MBE growth techiques to fabricate high density InAs/GaAs quantum dot materials. It shows that a detailed introduction about MBE device, analysis on some influencing factors of quantum dot,the effects of growth onditions,growth temperature,growth rate,depositional thickness and as pressure on average height,surface morphology and other some properties.Furthmore, it gives corresponding and appropriate explanation. This paper also studys that variation of temperature and exciting power has some efforts on photoluminescence properties of InAs/GaAs quantum dot.This paper presents that effect of In compostion in strained layer on uniformity and photoluminescence properties of quantum dot as well as explanation about influence law.